SMD package

Surface mount photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm

PD Series Active area φ Photo current Rise time Size Note Data sheet
SPD19-C 0,19 mm 80 6 A 6 ns 3 x 2 x 1.1 mm
SPD19-CT 0,19 mm 80 6 A 6 ns 3.5 x 2.7 x 1.8 mm SMT type request

Epoxy package

Silicon Pin-photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: 3 mm, 5 mm

PD Series Active area φ Photo current Rise time Package Note Data sheet
SPD19-33 0.19 mm 50 12 A 6 ns 3 mm request
SPD64-01 0.64 mm 30 20 A 10 ns 5 mm request
SPD64-02 0.64 mm 28 20 A 10 ns 5 mm
SPD64-02B 0.64 mm 28 18 A 10 ns 5 mm visible light cutoff request
SPD64-03 0.64 mm 40 20 A 10 ns 5 mm request
SPD64-04 0.64 mm 90 20 A 10 ns 5 mm
SPD64-04B 0.64 mm 90 18 A 10 ns 5 mm visible light cutoff request
SPD64-06 0.64 mm 24 20 A 10 ns 5 mm request

TO package

Silicon Pin-photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: TO-18, TO-39, TO-46

PD Series Active area φ Photo current Rise time Package Note Data sheet
SPD17-0F 1,69 mm 110 25 A 10 ns TO-46
SPD17-3F 1,69 mm 30 40 A 10 ns TO-46 request
SPD17-5F 1,69 mm 36 14 A 10 ns TO-46 request
SPD17-0T 1,69 mm 120 20 A 10 ns TO-18
SPD17-3T 1,69 mm 20 55 A 10 ns TO-18 request
SPD17-5T 1,69 mm 90 15 A 10 ns TO-18 request
SPD26-0T 2,56 mm 120 30 A 30 ns TO-18 request
SPD26-3T 2,56 mm 20 45 A 30 ns TO-18 request
SPD26-5T 2,56 mm 90 15 A 30 ns TO-18 request
SPD400-0F 4 mm 120 50 A 45 ns TO-46
SPD400-3F 4 mm 60 40 A 45 ns TO-46 request
SPD784-0P 7,84 mm 130 100 A 50 ns TO-39 request
SPD784-9P 7,84 mm 100 80 A 50 ns TO-39 request
SPD900-0P 9 mm 130 130 A 300 ns TO-39 request
SPD900-9P 9 mm 100 110 A 300 ns TO-39

PDs with integrated transimpedance amplifier

PIN silicon photodiodes with integrated low noise JFET TI amplifier, integrated feedback resistor and capacitor, wavelength range 400 - 1100nm, spectral responsivity peak at 850 nm, hermetical sealed TO-5 package with collimating glass lens, very low offset and drift parameters, dual supply voltage +/-5V up to +/-18V, operating temp.: -25 .. +85C, RoHS and WEEE conformity

IQ Series Active area φ Transimpendance Rise time Bandwidth Note Data sheet
IQ800L 4.8 mm 100 100 MOhm 35 s 10 kHz
IQ801L 4.8 mm 100 10 MOhm 15 s 25 kHz
IQ802L 4.8 mm 100 1 MOhm 3 s 120 kHz

Phototransistors

Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: SMD, 3 mm, 5 mm

PT Series Active area φ Photo current Rise time Package Note Data sheet
SPT36-C 0,36 mm 80 3 mA 20 s SMD 3 x 2 x 1.1 mm
SPT36-05 0.36 mm 80 4 mA 20 s 5 mm flat epoxy Peak at 900 nm request
SPD36-33 0.36 mm 50 7 mA 20 s 3 mm epoxy Peak at 900 nm request
SPT64-05 0.64 mm 80 5 mA 8 s 5 mm flat epoxy Peak at 900 nm request
SPT64-33 0.64 mm 50 10 mA 8 s 3 mm epoxy Peak at 900 nm request

MOQ: 1 piece

Roithner Lasertechnik GmbH, Wiedner Hauptstrae 76, A-1040 Vienna, Austria, Tel.: ++43 1 586 52 43 - 0, Fax ++43 1 586 52 43 - 44

12-May-2014