SILICON PHOTODIODES

SMD package

Surface mount photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak at 900 nm

Part No. Active area φ Photo current Rise time Size Note Data sheet
SPD19-C 0,19 mm² 80° 6 µA 6 ns 3 x 2 x 1.1 mm
SPD19-CT 0,19 mm² 80° 6 µA 6 ns 3.5 x 2.7 x 1.8 mm SMT type request

Epoxy package

Silicon PIN photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak at 900 nm
Package size: 3 mm, 5 mm

Part No. Active area φ Photo current Rise time Package Note Data sheet
SPD19-33 0.19 mm² 50° 12 µA 6 ns 3 mm request
SPD64-01 0.64 mm² 30° 20 µA 10 ns 5 mm request
SPD64-02 0.64 mm² 28° 20 µA 10 ns 5 mm
SPD64-02B 0.64 mm² 28° 18 µA 10 ns 5 mm visible light cutoff request
SPD64-03 0.64 mm² 40° 20 µA 10 ns 5 mm request
SPD64-04 0.64 mm² 90° 20 µA 10 ns 5 mm
SPD64-04B 0.64 mm² 90° 18 µA 10 ns 5 mm visible light cutoff request
SPD64-06 0.64 mm² 24° 20 µA 10 ns 5 mm request

TO package

Silicon PIN photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak at 900 nm
Package size: TO-18, TO-39, TO-46

Part No. Active area φ Photo current Rise time Package Note Data sheet
SPD17-0F 1,69 mm² 110° 25 µA 10 ns TO-46
SPD17-3F 1,69 mm² 30° 40 µA 10 ns TO-46 request
SPD17-5F 1,69 mm² 36° 14 µA 10 ns TO-46 request
SPD17-0T 1,69 mm² 120° 20 µA 10 ns TO-18
SPD17-3T 1,69 mm² 20° 55 µA 10 ns TO-18 request
SPD17-5T 1,69 mm² 90° 15 µA 10 ns TO-18 request
SPD26-0T 2,56 mm² 120° 30 µA 30 ns TO-18 request
SPD26-3T 2,56 mm² 20° 45 µA 30 ns TO-18 request
SPD26-5T 2,56 mm² 90° 15 µA 30 ns TO-18 request
SPD400-0F 4 mm² 120° 50 µA 45 ns TO-46
SPD400-3F 4 mm² 60° 40 µA 45 ns TO-46 request
SPD784-0P 7,84 mm² 130° 100 µA 50 ns TO-39 request
SPD784-9P 7,84 mm² 100° 80 µA 50 ns TO-39 request

PDs with integrated transimpedance amplifier

Silicon PIN photodiodes with integrated low noise JFET TI amplifier, integrated feedback resistor and capacitor
Very low offset and drift parameters, dual supply voltage ±5V up to ±18V
Operating temp.: -25° - +85°C, RoHS and WEEE conformity
Wavelength range 400 - 1100nm, spectral responsivity peak at 850 nm
Package: hermetical sealed TO-5 with collimating glass lens

Part No. Active area φ Transimpendance Rise time Bandwidth Note Data sheet
IQ800L 4.8 mm² 100° 100 MOhm 35 µs 10 kHz
IQ801L 4.8 mm² 100° 10 MOhm 15 µs 25 kHz
IQ802L 4.8 mm² 100° 1 MOhm 3 µs 120 kHz

Phototransistors

Range of sensivity: 400 - 1100 nm, peak at 900 nm
Package size: SMD, 3 mm, 5 mm

Part No. Active area φ Photo current Rise time Package Note Data sheet
SPT36-C 0,36 mm² 80° 3 mA 20 µs SMD 3 x 2 x 1.1 mm
SPT36-05 0.36 mm² 80° 4 mA 20 µs 5 mm flat epoxy Peak at 900 nm request
SPD36-33 0.36 mm² 50° 7 mA 20 µs 3 mm epoxy Peak at 900 nm request
SPT64-05 0.64 mm² 80° 5 mA 8 µs 5 mm flat epoxy Peak at 900 nm request
SPT64-33 0.64 mm² 50° 10 mA 8 µs 3 mm epoxy Peak at 900 nm request
MOQ: 1 piece

Roithner Lasertechnik GmbH, Wiedner Hauptstraße 76, A-1040 Vienna, Austria, Tel.: +43 1 586 52 43 - 0, Fax +43 1 586 52 43 - 44