MID-IR PHOTODIODES STANDARD UNITS

MID-IR PDs

All photodiodes are available with different packages. Additional you can choose following add-ons:

  • Window (W): to protect PD chip die from damage
  • Parabolic reflector (R): to increase the detection of an radiation on the sensitive area, and for protection
  • Thermocooler and thermoresistor (T): to provide wavelength tuning and stabile operating

The photodiode heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal substrate. Light is absorbed in the active layer of the PD and the spectral response of the PD is determined by the energy gap of the material in the active layer.

Part No. Sensitivity Range Sensitive Area Responsivity Dark Current PR TEC WIN Package Note Data sheet
PD24-03 1.0 - 2.4 µm 0.3 mm 0.7-1.0 A/W 10-60 µA TO-18
PD24-03R 1.0 - 2.4 µm 0.3 mm 0.7-1.0 A/W 10-60 µA yes TO-18 request
PD24-03RW 1.0 - 2.4 µm 0.3 mm 0.7-1.0 A/W 10-60 µA yes yes TO-18 request
PD24-03TW 1.0 - 2.4 µm 0.3 mm 0.7-1.0 A/W 10-60 µA yes TO-5 request
PD24-03TRW 1.0 - 2.4 µm 0.3 mm 0.7-1.0 A/W 10-60 µA yes yes TO-5 request
PD24-05 1.0 - 2.4 µm 0.5 mm 0.9-1.1 A/W 10-100 µA TO-18 request
PD24-05R 1.0 - 2.4 µm 0.5 mm 0.9-1.1 A/W 10-100 µA yes TO-18 request
PD24-05RW 1.0 - 2.4 µm 0.5 mm 0.9-1.1 A/W 10-100 µA yes yes TO-18 request
PD24-05TW 1.0 - 2.4 µm 0.5 mm 0.9-1.1 A/W 10-100 µA yes TO-5 request
PD24-05TRW 1.0 - 2.4 µm 0.5 mm 0.9-1.1 A/W 10-100 µA yes yes TO-5 request
PD24-10 1.0 - 2.4 µm 1.0 mm 0.8-0.9 A/W 100-300 µA TO-18 request
PD24-10R 1.0 - 2.4 µm 1.0 mm 0.8-0.9 A/W 100-300 µA yes TO-18 request
PD24-10RW 1.0 - 2.4 µm 1.0 mm 0.8-0.9 A/W 100-300 µA yes yes TO-18 request
PD24-10TW 1.0 - 2.4 µm 1.0 mm 0.8-0.9 A/W 100-300 µA yes TO-5 request
PD24-10TRW 1.0 - 2.4 µm 1.0 mm 0.8-0.9 A/W 100-300 µA yes yes TO-5 request
Part No. Sensitivity Range Sensitive Area Responsivity Dark Current PR TEC WIN Package Note Data sheet
PD36-03 3.0 - 3.7 µm 0.3 mm 0.75-1.1 A/W 200-600 µA TO-18 request
PD36-03R 3.0 - 3.7 µm 0.3 mm 0.75-1.1 A/W 200-600 µA yes TO-18 request
PD36-03RW 3.0 - 3.7 µm 0.3 mm 0.75-1.1 A/W 200-600 µA yes yes TO-18 request
PD36-03TW 3.0 - 3.7 µm 0.3 mm 0.75-1.1 A/W 200-600 µA yes TO-5 request
PD36-03TRW 3.0 - 3.7 µm 0.3 mm 0.75-1.1 A/W 200-600 µA yes yes TO-5 request
PD36W-03 1.8 - 3.8 µm 0.3 mm 0.7-0.8 A/W 50-600 µA TO-18 request
PD36W-03R 1.8 - 3.8 µm 0.3 mm 0.7-0.8 A/W 50-600 µA yes TO-18 request
PD36W-03RW 1.8 - 3.8 µm 0.3 mm 0.7-0.8 A/W 50-600 µA yes yes TO-18 request
PD36W-03TW 1.8 - 3.8 µm 0.3 mm 0.7-0.8 A/W 50-600 µA yes TO-5 request
PD36W-03TRW 1.8 - 3.8 µm 0.3 mm 0.7-0.8 A/W 50-600 µA yes yes TO-5 request
PD36-05 1.8 - 3.6 µm 0.5 mm 1.0-1.5 A/W 50-1000 µA TO-18 request
PD36-05R 1.8 - 3.6 µm 0.5 mm 1.0-1.5 A/W 50-1000 µA yes TO-18 request
PD36-05RW 1.8 - 3.6 µm 0.5 mm 1.0-1.5 A/W 50-1000 µA yes yes TO-18
PD36-05TW 1.8 - 3.6 µm 0.5 mm 1.0-1.5 A/W 50-1000 µA yes TO-5 request
PD36-05TRW 1.8 - 3.6 µm 0.5 mm 1.0-1.5 A/W 50-1000 µA yes yes TO-5 request
Part No. Sensitivity Range Sensitive Area Responsivity Dark Current PR TEC WIN Package Note Data sheet
PD43-03 3.0 - 4.6 µm 0.3 mm 0.8-1.2 A/W 1-6 mA TO-18 request
PD43-03R 3.0 - 4.6 µm 0.3 mm 0.8-1.2 A/W 1-4 mA yes TO-18 request
PD43-03RW 3.0 - 4.6 µm 0.3 mm 0.8-1.2 A/W 1-4 mA yes yes TO-18 request
PD43-03TW 3.0 - 4.6 µm 0.3 mm 0.8-1.2 A/W 1-4 mA yes TO-5 request
PD43-03TRW 3.0 - 4.6 µm 0.3 mm 0.8-1.2 A/W 1-4 mA yes yes TO-5 request
PD43-05 2.6 - 4.6 µm 0.5 mm 1.0-1.6 A/W 8-25 mA TO-18 request
PD43-05R 2.6 - 4.6 µm 0.5 mm 1.0-1.6 A/W 8-25 mA yes TO-18 request
PD43-05RW 2.6 - 4.6 µm 0.5 mm 1.0-1.6 A/W 8-25 mA yes yes TO-18
PD43-05TW 2.6 - 4.6 µm 0.5 mm 1.0-1.6 A/W 8-25 mA yes TO-5 request
PD43-05TRW 2.6 - 4.6 µm 0.5 mm 1.0-1.6 A/W 8-25 mA yes yes TO-5 request

IR-PD Series

MID-IR PDs in TO-39 package, with integrated 3.5 mm Si or CdSb immersion lens

Part No. Sensitivity Range Sensitive Area Responsivity Dark Current Package Note Data sheet
IR-PD 3.0 3.0 - 3.2 µm 0.2 A/W TO-39 InAs request

Photoresistor

MID-IR photoresistors, material: PbSe, voltage sensitivity: 350 - 1000 V/W

Operates in photoconductivity mode at bias voltage

Part No. Sensitivity Range Sensitive Area Detectivity Package Note Data sheet
PR43 1.0 - 4.5 µm 2.0 x 2.0 mm (4-10)·108 cm·Hz1/2·W-1 TO-5 tr / tf = 10 µs
MOQ: 1 piece

Roithner Lasertechnik GmbH, Wiedner Hauptstraße 76, A-1040 Vienna, Austria, Tel.: +43 1 586 52 43 - 0, Fax +43 1 586 52 43 - 44