PHOTODIODE CHIP DIES

Part No. Weavelength Range Sensitiv Area Material Note Data sheet
PX410 1.0 -1.65 µm Ø 75 µm InGaAs Note Request
PX511-2 1.0 -1.65 µm Ø 300 µm InGaAs Note
PX611-2 1.0 -1.65 µm Ø 1 mm InGaAs Note
PX711 1.0 -1.65 µm Ø 2 mm InGaAs Note Request
Part No. Weavelength Range Sensitiv Area Material Note Data sheet
LAPD-1-09-17-CHIP 1.0 -1.7 µm Ø 1 mm InGaAs Note
LAPD-1-06-17-CHIP 0.6 -1.7 µm Ø 1 mm InGaAs Note
LAPD-2-09-17-CHIP 1.0 -1.7 µm Ø 2 mm InGaAs Note
LAPD-2-06-17-CHIP 0.6 -1.7 µm Ø 2 mm InGaAs Note
LAPD-3-09-17-CHIP 1.0 -1.7 µm Ø 3 mm InGaAs Note
MOQ: 1 piece

Roithner Lasertechnik GmbH, Wiedner Hauptstraße 76, A-1040 Vienna, Austria, Tel.: +43 1 586 52 43 - 0, Fax +43 1 586 52 43 - 44